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PDF SiHFP350LC Data sheet ( Hoja de datos )
| Número de pieza | SiHFP350LC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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IRFP350LC, SiHFP350LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
400
VGS = 10 V
76
20
37
Single
0.30
TO-247
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of MOSFETs offer the designer a
new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247
IRFP350LCPbF
SiHFP350LC-E3
IRFP350LC
SiHFP350LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 2.7 µH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD ≤ 16 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
400
± 30
16
9.9
64
1.5
390
16
19
190
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91224
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
www.DataSheet4U.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFP350LC, SiHFP350LC
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91224
S-Pending-Rev. A, 16-Jun-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFP350LC.PDF ] | |
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