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PDF SiHFP32N50K Data sheet ( Hoja de datos )
| Número de pieza | SiHFP32N50K | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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IRFP32N50K, SiHFP32N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
190
59
84
Single
0.135
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D
TO-247
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low RDS(on)
• Lead (Pb)-free Available
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switching and High Frequency Circuits
TO-247
IRFP32N50KPbF
SiHFP32N50K-E3
IRFP32N50K
SiHFP32N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 0.87 mH, RG = 25 Ω, IAS = 32 A.
c. ISD ≤ 32 A, dI/dt ≤ 197 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may applyrom case.
Document Number: 91221
S-81361-Rev. B, 07-Jul-08
LIMIT
500
± 30
32
20
130
3.7
450
32
46
460
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1
1 page  
35
30
25
20
15
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10
5
0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
t , Rectangular Pulse Duration (sec)
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
15 V
VDS L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91221
S-81361-Rev. B, 07-Jul-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFP32N50K.PDF ] | |
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