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PDF APM9945K Data sheet ( Hoja de datos )
| Número de pieza | APM9945K | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM9945K
Dual N-Channel Enhancement Mode MOSFET
Features
• 60V/3A,
RDS(ON) =100mΩ(typ.) @ VGS = 10V
RDS(ON) =120mΩ(typ.) @ VGS = 4.5V
• Super High Dense Cell Design
www.DataSheet4U.c•om Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Pin Description
S1
G1
S2
G2
D1
D1
D2
D2
SOP − 8
(7) (8)
D1 D1
(5) (6)
D2 D2
• Power Management in Desktop or DC/DC
Converters
(2) (4)
G1 G2
Ordering and Marking Information
S1 S2
(1) (3)
N-Channel MOSFET
APM9945
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9945 K :
APM9945
XXXXX
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
www.anpec.com.tw
1 page  
APM9945K
Typical Characteristics (Cont.)
www.DataSheet4U.com
Output Characteristics
20
V = 6,7,8,9,10V
GS
18
5V
16
14
12
10
8 4V
6
4
2
3V
0
0 2 4 6 8 10
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
0.20
0.18
0.16
0.14
V =4.5V
GS
0.12
0.10
V =10V
GS
0.08
0.06
0.04
0.02
0
2468
ID - Drain Current (A)
10
Transfer Characteristics
20
18
16
14
12
10 T =125oC
j
8
6
T =25oC
j
4
T =-55oC
j
2
0
01234567
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I =250µA
DS
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
5
www.anpec.com.tw
5 Page | ||
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