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Número de pieza | APM3009NU | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Anpec Electronics Coropration | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM3009NU (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! APM3009NU
N-Channel Enhancement Mode MOSFET
Features
• 30V/50A,
RDS(ON)=7mΩ (typ.) @ VGS=10V
RDS(ON)=11mΩ
(typ.)
@
V =4.5V
GS
• Super High Dense Cell Design
www.DataSheet4U.c•om Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer or
DC/DC Converters
Pin Description
GD
S
Top View of TO-252
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM3009N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM3009N U :
APM3009N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
www.anpec.com.tw
1 page APM3009NU
Typical Characteristics (Cont.)
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Output Characteristics
100
90
V =4,5,6,7,8,9,10V
GS
80
70
60
50
40
30 3V
20
10
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
16
14
12
V =4.5V
GS
10
8 V =10V
GS
6
4
2
0
0 20 40 60 80 100
ID - Drain Current (A)
100
90
80
70
60
50
40
30
20
10
0
0
Transfer Characteristics
T =125oC
j
T =25oC
j
T =-55oC
j
123456
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
5
www.anpec.com.tw
5 Page APM3009NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
www.DataSheet4U.com
T1
Application
TO-252
A
330 ±3
F
B
100 ± 2
D
C
13 ± 0. 5
D1
J
2 ± 0.5
Po
T1 T2
16.4 + 0.3
-0.2
2.5± 0.5
P1 Ao
W
16+ 0.3
- 0.1
Bo
P
8 ± 0.1
Ko
E
1.75± 0.1
t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
11
www.anpec.com.tw
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet APM3009NU.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM3009N | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |
APM3009NU | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |
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