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PDF AO4470 Data sheet ( Hoja de datos )
| Número de pieza | AO4470 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4470
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4470 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion. Standard product AO4470 is Pb-free
(meets ROHS & Sony 259 specifications). AO4470L
is a Green Product ordering option. AO4470 and
AO4470L are electrically identical.
Features
VDS (V) = 30V
ID = 18A
RDS(ON) < 5.5mΩ
RDS(ON) < 6.2mΩ
(V GS = 10V)
(VGS = 10V)
(VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
18
15
80
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4470.PDF ] | |
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