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PDF AO4435 Data sheet ( Hoja de datos )
| Número de pieza | AO4435 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4435
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4435 uses advanced trench technology to
www.DataSheet4Up.rcoovmide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4435 is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS = -30V
ID = -10A
(VGS = -10V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
-10 -8
ID -8 -6
IDM -80
Power Dissipation A
TA=25°C
TA=70°C
PD
3.1 1.7
2.0 1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4435.PDF ] | |
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