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PDF MRF6V10250HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V10250HSR3 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
•
DTPyouputtyic=aCl2yP5c0luelsW=ead1t0tPs%ePrfeoarkm, afn=ce1:0V90DDM=Hz5,0PVuolsltes,WIDiQdth=
250 mA,
= 100 μsec,
Power Gain — 21 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak
Power
Features
www.DataSheet4U•.coCmharacterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V10250HS
Rev. 0, 2/2008
MRF6V10250HSR3
1090 MHz, 250 W, 50 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +100
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
RθJC
0.10
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
1
1 page  
TYPICAL CHARACTERISTICS
1000
100
Coss
Ciss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
50
10
Crss
1
TJ = 150°C
TJ = 200°C
TJ = 175°C
0.1
0
www.DataSheet4U.com
10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
Figure 3. Capacitance versus Drain - Source Voltage
TC = 25°C
1
1
10
100
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
300
24 70
22
Gps
20
ηD
60
50
18 40
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
16
50 100
30
400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
58
P3dB = 54.94 dBm (311 W)
57
Ideal
56 P1dB = 54.55 dBm (285 W)
55
Actual
54
53
52
51
50
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz
49 Pulse Width = 100 μsec, Duty Cycle = 10%
48
26 28 30 32 34 36 38
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
23
22 IDQ = 1 A
750 mA
500 mA
21
250 mA
20
19
18 VDD = 50 Vdc, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
17
50 100
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
400
22
21
20
19
45 V 50 V
18
40 V
17
35 V
16
VDD = 30 V
IDQ = 250 mA, f = 1090 MHz
15 Pulse Width = 100 μsec
Duty Cycle = 10%
14
50 100
400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MRF6V10250HSR3.PDF ] | |
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