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Número de pieza | KMM466F203CS2-L | |
Descripción | 2M X 64 SODIMM | |
Fabricantes | Samsung Semiconductor | |
Logotipo | ||
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No Preview Available ! DRAM MODULE
KMM466F203CS2-L
KMM466F213CS2-L
www.DataSheet4U.com
2Mx64 SODIMM
(2MX8 Base)
Revision 2.0
November 1997
- 1 - Rev. 2.0 (Nov. 1997)
1 page DRAM MODULE
KMM466F203CS2-L
KMM466F213CS2-L
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V SS
Voltage on VCC supply relative to V SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
VIN, VOUT
VCC
Tstg
PD
IOS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
8
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended
periods may affect device reliability.
www.DataSRheEetC4UO.cMomMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC 3.0 3.3 3.6
VSS 0 0 0
VIH 2.0
- VCC+0.3*1
VIL -0.3*2
-
0.8
Unit
V
V
V
V
*1 : VCC+1.3V at pulse width ≤15ns, which is measured at VCC.
*2 : -1.3V at pulse width ≤15ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICCS
II(L)
IO(L)
VOH
VOL
Speed
-L5
-L6
Don't care
-L5
-L6
-L5
-L6
Don't care
-L5
-L6
-
-
Don't care
Don't care
KMM466F203CS2-L
Min Max
- 720
- 640
-8
- 720
- 640
- 640
- 560
- 1.6
- 720
- 640
- 2.0
- 1.6
-40 40
-5 5
2.4 -
- 0.4
KMM466F213CS2-L
Min Max
- 880
- 800
-8
- 880
- 800
- 720
- 640
- 1.6
- 880
- 800
- 2.0
- 1.6
-40 40
-5 5
2.4 -
- 0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
ICC1 : Operating Current * ( RAS, CAS, Address cycling @t RC=min)
ICC2 : Standby Current ( RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * ( CAS=VIH, RAS cycling @tRC=min)
ICC4 : Extended Data Out Mode Current * ( RAS=VIL, CAS cycling : tHPC=min)
ICC5 : Standby Current ( RAS=CAS=W=VCC-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current. Average power supply, Battery back-up mode.
Input high voltage(V IH)=VCC-0.2V, Input low voltage(V IL)=0.2V, UCAS,LCAS=0.2V,
Din=Don't care, tRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), tRAS=tRASmin~300ns)
ICCS : Self Refresh Current ( RAS=UCAS=LCAS=VIL, W=OE=A0~A1=VCC-0.2V or 0.2V, DQ~DQ63=V CC-0.2V or Open)
II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.3V, all other pins not under test=0 V)
IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤VCC)
VOH : Output High Voltage Level (I OH = -2mA)
VOL : Output Low Voltage Level (I OL = 2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one page mode cycle, t HPC.
- 5 - Rev. 2.0 (Nov. 1997)
5 Page DRAM MODULE
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
www.DataSheet4U.com
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VIH -
DQ
VIL -
tRAS
tRC
tCRP
tRCD
tRAD
tASR
tRAH
ROW
ADDRESS
tASC
tCSH
tRSH
tCAS
tRAL
tCAH
COLUMN
ADDRESS
tCWL
tRWL
tWP
tOED
tDS
tOEH
tDH
DATA-IN
KMM466F203CS2-L
KMM466F213CS2-L
tRP
tCRP
Don′t care
Undefined
- 11 -
Rev. 2.0 (Nov. 1997)
11 Page |
Páginas | Total 22 Páginas | |
PDF Descargar | [ Datasheet KMM466F203CS2-L.PDF ] |
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KMM466F203CS2-L | 2M X 64 SODIMM | Samsung Semiconductor |
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