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PDF HAT1055RJ Data sheet ( Hoja de datos )
| Número de pieza | HAT1055RJ | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT1055RJ (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G0067-0100Z
Rev.1.00
Aug.29.2003
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Rev.1.00, Aug.29.2003, page 1 of 9
1 page  
HAT1055R, HAT1055RJ
www.DataSheet4U.com
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
Pulse Test
–0.8
–0.6
–0.4
–0.2
0
0
ID = –5 A
–2 A
–1 A
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 VGS = –4.5 V
0.05 –10 V
0.02
0.01
–1
–3 –10 –30
Drain Current ID (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
0.10
VGS = –4.5 V
–5 A
ID = –1, –2 A
–5 A
0.05
0
–40
–10 V
–1, –2 A
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
2
25°C
75°C
1 V DS = –10 V
Pulse Test
0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
Rev.1.00, Aug.29.2003, page 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAT1055RJ.PDF ] | |
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