(PDF) H7N0312AB Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H7N0312AB
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H7N0312AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance www.DataSheet4U.cRoDmS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1127-0400 (Previous: ADE-208-1571B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 6 1 page H7N0312AB www.DataSheet4U.com Reverse Drain Current vs. Souece to Drain Voltage 100 10 V 80 VGS = 0 V 5V 60 40 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 1shot pulse 0.01 10 µ 100 µ θch – c (t) = γ s (t) • θch – c θch – c = 1.0°C/W, Tc = 25°C PDM D= PW T PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 Rev.4.00 Sep 07, 2005 page 5 of 6 5 Page

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PDF H7N0312AB Data sheet ( Hoja de datos )