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Número de pieza | STY30NK90Z | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STY30NK90Z
N-channel 900V - 0.21Ω - 26A - Max247
Zener-protected SuperMESH™ Power MOSFET
General features
www.DataSheet4U.com Type
STY30NK90Z
VDSS
900V
RDS(on)
<0.26Ω
ID pW
28A 500W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
1
Max247
Internal schematic diagram
Order codes
Part number
STY30NK90Z
Marking
Y30NK90Z
Package
Max247
Packaging
Tube
October 2006
Rev 4
1/14
www.st.com
14
1 page STY30NK90Z
2 Electrical characteristics
Electrical characteristics
www.DataSheet4U.com
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 1mA, VGS =0
VDS = max rating
VDS = max rating,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 150µA
VGS = 10V, ID = 14A
900
3
Typ. Max. Unit
V
10 µA
100 µA
±100 µA
3.75 4.5
V
0.21 0.26
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15V, ID = 14A
26 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
12000
852
166
pF
pF
pF
Coss
(2)
eq
Equivalent output
capacitance
VGS = 0V, VDS = 0V
to 720V
377 pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 450V, ID = 13A
RG = 4.7Ω VGS = 10V
(see Figure 13)
VDD = 720V, ID = 26A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
67 ns
59 ns
250 ns
72 ns
350 490 nC
51 nC
190 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
5/14
5 Page STY30NK90Z
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
www.DataSheet4U.com
11/14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet STY30NK90Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
STY30NK90Z | N-CHANNEL MOSFET | STMicroelectronics |
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