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Número de pieza | TPD1032F | |
Descripción | 2-IN-1 Low-Side Power Switch | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPD1032F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TPD1032F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1032F
2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive
The TPD1032F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
is equipped with intelligent self-protection functions.
www.DataSheetF4Ue.caotmures
• Two built-in power IC chips with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOS) on
each chip.
• Can directly drive a power load from a CMOS or TTL logic.
Weight: 0.08 g (typ.)
• Built-in protection circuits against overvoltage (active clamp),
overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)
• Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40~110°C)
• 8-pin SOP package for surface with embossed-tape packing.
Pin Assignment (top view)
SOURCE1 1
8 DRAIN1
IN1 2
7 DRAIN1
SOURCE2 3
6 DRAIN2
IN2 4
5 DRAIN2
Note1: Due to its MOS structure, this product is sensitive to static electricity.
Marking
TPD1032
F
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-10-31
1 page Note 4:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both device.)
Note 5: Active clamp capability (single pulse) test condition
VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 3 A, RG = 25 Ω
Note 6: Repetitive rating, pulse width limited by maximum channel temperature.
TPD1032F
Electrical Characteristics
Characteristics
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Drain-source clamp voltage
Symbol
Test
Circuit
Test Condition
V (CL) DSS
⎯
Tch=-40~110℃
VIN = 0 V,
ID=1mA
Min Typ. Max Unit
40 ⎯ 60 V
Input threshold voltage
Vth
Protective circuit operation
input voltage range
VIN (opr)
Drain cut-off current
IDSS
Input current
IIN (1)
IIN (2)
Drain-source on resistance RDS (ON)
Overtemperature protection
TS
Overcurrent protection
IS
Switching time
Source-drain diode forward
voltage
tON
tOFF
VDSF
⎯
Tch=25℃
VDS = 13 V,
Tch=-40~110℃ ID=10mA
1.0 ⎯ 2.8
0.9 ⎯ 3.0
Tch=25℃
⎯
Tch=-40~110℃
⎯
⎯
3⎯
3.5 ⎯
7
7
Tch=25℃
⎯
VIN = 0 V, VDS=20V
Tch=-40~110℃
⎯ ⎯ 10
⎯ ⎯ 100
⎯ Tch=25℃
VIN = 5 V, at normal
operation
⎯ ⎯ 300
VIN = 5 V, when
⎯ Tch=-40~110℃ overcurrent protective
circuit is actuated
⎯ ⎯ 350
Tch=25℃
⎯
VIN = 5 V, ID = 1 A
Tch=-40~110℃
⎯ 0.25 0.4
⎯ ⎯ 0.6
⎯ ⎯ VIN = 5 V
150 160
⎯
Tch=25℃
⎯
VIN = 5 V
Tch=-40~110℃
3 3.7 ⎯
2 ⎯⎯
Tch=25℃
⎯ ⎯ 30
1
Tch=-40~110℃ VDD = 13 V, VIN = 0V/5 V,
Tch=25℃
ID = 1 A
⎯
⎯
⎯
⎯
60
60
Tch=-40~110℃
⎯ ⎯ 90
⎯ Tch=25℃
IF = 3 A, VIN = 0 V
⎯ ⎯ 1.7
V
V
μA
μA
Ω
°C
A
μs
V
Test Circuit 1
Switching time measuring circuit
Test Circuit
Measured Waveforms
TPD1032F
IN OUT GND
To be set so that
ID = 1 A.
V
VIN Waveform
VOUT Waveform
90%
10%
90%
10%
tON tOFF
5V
13 V
5 2006-10-31
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPD1032F.PDF ] |
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