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PDF STS6PF30L Data sheet ( Hoja de datos )
| Número de pieza | STS6PF30L | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS6PF30L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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STS6PF30L
P-CHANNEL 30V - 0.027 Ω - 6A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS6PF30L
30 V <0.030 Ω
6A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.027 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s MOBILE PHONE APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
May 2003
.
Information furnished is believed to be accurate and reliable. However, STMicroel
of use of such information nor for any infringement of patents or other rights of third
by implication or othVerawliusee under any patent or patent rigUhntsitof STMicroelectronic
to change without notice. This publication supersedes and replaces all information
authorized for use as c3r0itical components in life support deVvices or systems withou
30 V
± 16
6
The ST logo is regVistered trademark of ST
® 2003 STMicroelectronics - All Righ
A
3.8 All other names arAe the property of their re
24 A
STMicroelectronics GROUP OF CO
Australia - B2ra.5zil - China - Finland - France - GerWmany - Hong Kong - In
Note: For the P-CHANNEL MSOinSgaFpEoTre -aSctpuaainl -pSowlaerditeyn -oSf witzerland - Un
voltages and current has to be reversed
http://www.st.com
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS6PF30L
Normalized on Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS6PF30L.PDF ] | |
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