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PDF TLP833F Data sheet ( Hoja de datos )
| Número de pieza | TLP833F | |
| Descripción | PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TLP833F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TOSHIBA Photointerrupter Infrared LED + Phototransistor
TLP833(F)
TLP833(F)
Lead(Pb)-Free
Copiers, Printers, Fax Machines
VCRS, Microwave Ovens, Air
Conditioners
Automatic Vending Machines
Various Position Detection Sensors
www.DataSheet4U.com
The TLP833(F) is a photointerrupter which
incorporates a high radiant power GaAs LED and a
fast−response Si phototransistor. The package has
a deep gap.
• Package with deep gap (gap: 12 mm)
• Designed for direct mounting on printed circuit
boards (positioning pins included).
• Gap: 5mm
• Resolution: Slit width 0.5mm
• High current transfer ratio: IC/IF = 5% (min)
• High temperature operation: Topr = 95°C (max)
• Package material: Polybutylene terephthalate
(UL94−V−0)
• Detector impermeable to visible light
TOSHIBA
Weight: 1g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF 50 mA
Forward current 25°C < Ta ≦ 85°C
derating
Ta > 85°C
ΔIF/°C
−0.33
−2
mA/°C
Reverse voltage
VR 5 V
Collector−emitter voltage
VCEO
35
V
Emitter−collector voltage
VECO
5
V
Collector power dissipation
PC 75 mW
Collector power dissipation derating
(Ta > 25°C)
ΔPC/°C
−1
mW/°C
Collector current
Operating temperature range
Storage temperature range
Soldering temperature (5 s)
IC 50 mA
Topr −30~85 °C
Tstg −40~100 °C
Tsol 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-10-01
1 page  
80
60
40
20
0
0
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IF – Ta
20 40 60 80
Ambient temperature Ta (°C)
100
TLP833(F)
PC – Ta
80
60
40
20
0
0 20 40 60 80 100
Ambient temperature Ta (°C)
IF – VF
(typ.)
50
30
10
5
Ta=75°C
3 50
25
0
−25
1
0.8 0.9
1.0 1.1 1.2
1.3
Forward voltage VF (V)
1.4
100
50
30
10
5
3
1
IC / IF – IF
Ta=25°C
VCE = 2 V
VCE = 0.4 V
sample 2
sample 1
35
10
30 50
Forward current IF (mA)
100
IC – IF
10
Ta=25°C
5
VCE = 2 V
VCE = 0.4 V
3
sample 2
1
sample 1
0.5
0.3
0.1
1
35
10
30 50
100
Forward current IF (mA)
6
Ta = 25 °C
5
IC – VCE
(typ.)
20
4
15
3
10
2
1 IF=5mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
5 2007-10-01
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TLP833F.PDF ] | |
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