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PDF SFP70N06 Data sheet ( Hoja de datos )
| Número de pieza | SFP70N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Wisdom | |
| Logotipo |  |
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Wisdom Technologies Int’l
SFP70N06
Features
■ Low RDS(on) (0.015Ω )@VGS=10V
■ Low Gate Charge (Typical 65nC)
www.DataSheet4U.com ■ Low Crss (Typical 150pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 3)
Value
60
70
51
280
±25
800
7.0
158
1.05
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
0.95
-
62.5
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
June, 2004. Rev. 0.
Copyright@Wisdom Technologies International, All rights reserved.
1/7
1 page  
SFP70N06
Fig. 12. Gate Charge Test Circuit & Waveforms
www.DataSheet4U.com
12V
50KΩ
200nF
300nF
VGS
SameType
asDUT
VDS
VGS
10V
Qgs
Qg
Qgd
1mA
DUT
Fig 13. Switching Time Test Circuit & Waveforms
Charge
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5ratedVDS)
DUT
VDS 90%
Vin10%
td(on)
tr
ton
td(off) tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
RG
ID
L
VDD
DUT
EAS=--21-- LLIAS2--B--V--DB--SV-S-D---S--S-V--D--D--
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Copyright@Wisdom Technologies International, All rights reserved.
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SFP70N06.PDF ] | |
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