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PDF CY7C1470BV25 Data sheet ( Hoja de datos )

Número de pieza CY7C1470BV25
Descripción (CY7C147xBV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM
Fabricantes Cypress Semiconductor 
Logotipo Cypress Semiconductor Logotipo



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No Preview Available ! CY7C1470BV25 Hoja de datos, Descripción, Manual

CY7C1470BV25
CY7C1472BV25, CY7C1474BV25
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Features
Pin-compatible and functionally equivalent to ZBT™
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
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Fully registered (inputs and outputs) for pipelined operation
Byte Write capability
Single 2.5V power supply
2.5V IO supply (VDDQ)
Fast clock-to-output times
3.0 ns (for 250-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1470BV25, CY7C1472BV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1474BV25
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG Boundary Scan compatible
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25
are 2.5V, 2M x 36/4M x 18/1M x 72 synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back read
or write operations with no wait states. The CY7C1470BV25,
CY7C1472BV25, and CY7C1474BV25 are equipped with the
advanced (NoBL) logic required to enable consecutive read or
write operations with data being transferred on every clock cycle.
This feature dramatically improves the throughput of data in
systems that require frequent read or write transitions. The
CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the Byte Write Selects
(BWa–BWd for CY7C1470BV25, BWa–BWb for
CY7C1472BV25, and BWa–BWh for CY7C1474BV25) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
3.0
450
120
200 MHz
3.0
450
120
167 MHz
3.4
400
120
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-15032 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 29, 2008
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CY7C1470BV25 pdf
CY7C1470BV25
CY7C1472BV25, CY7C1474BV25
Pin Configurations (continued)
1
A NC/576M
B
C
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D
E
F
G
H
J
K
L
M
N
P
NC/1G
DQPc
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
DQPd
NC/144M
R MODE
2
A
A
NC
DQc
DQc
DQc
DQc
NC
DQd
DQd
DQd
DQd
NC
A
A
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1470BV25 (2M x 36)
3
CE1
CE2
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
4
BWc
BWd
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
5
BWb
BWa
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDI
TMS
6
CE3
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
A1
A0
7
CEN
WE
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDO
TCK
8
ADV/LD
OE
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
9
A
A
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC/288M
A
1
A NC/576M
2
A
B NC/1G
A
C NC NC
D NC DQb
E NC DQb
F NC DQb
G NC DQb
H NC NC
J DQb NC
K DQb NC
L DQb NC
M DQb NC
N DQPb NC
P NC/144M A
R MODE
A
3
CE1
CE2
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
CY7C1472BV25 (4M x 18)
4
BWb
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
5
NC
BWa
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDI
TMS
6
CE3
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
A1
A0
7
CEN
WE
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDO
TCK
8
ADV/LD
OE
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
9
A
A
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
11
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC/288M
A
Document #: 001-15032 Rev. *D
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CY7C1470BV25 arduino
CY7C1470BV25
CY7C1472BV25, CY7C1474BV25
Table 5. Partial Write Cycle Description
The partial write cycle description for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows.[1, 2, 3, 8]
Function (CY7C1470BV25)
Read
Write – No bytes written
Write Byte a – (DQa and DQPa)
Write Byte b – (DQb and DQPb)
Write Bytes b, a
www.DataSheWert4itUe.Bcoymte c – (DQc and DQPc)
Write Bytes c, a
Write Bytes c, b
Write Bytes c, b, a
Write Byte d – (DQd and DQPd)
Write Bytes d, a
Write Bytes d, b
Write Bytes d, b, a
Write Bytes d, c
Write Bytes d, c, a
Write Bytes d, c, b
Write All Bytes
WE
BWd
BWc
BWb
HXXX
L HHH
L HHH
L HH L
L HH L
LHLH
LHLH
L H LL L
LHL L
L LHH
L LHH
L LHL
L LHL
L L LH
L L LH
LLLL
LLLL
BWa
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
Function (CY7C1472BV25)
Read
Write – No Bytes Written
Write Byte a – (DQa and DQPa)
Write Byte b – (DQb and DQPb)
Write Both Bytes
WE
H
L
L
L
L
BWb
x
H
H
L
L
BWa
x
H
L
H
L
Function (CY7C1474BV25)
Read
Write – No Bytes Written
Write Byte X (DQx and DQPx)
Write All Bytes
WE BWx
Hx
LH
LL
L All BW = L
Note
8. Table lists only a partial listing of the Byte Write combinations. Any combination of BW[a:d] is valid. Appropriate write is based on which Byte Write is active.
Document #: 001-15032 Rev. *D
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