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PDF M54V24616 Data sheet ( Hoja de datos )
| Número de pieza | M54V24616 | |
| Descripción | MSM54V24616 | |
| Fabricantes | OKI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de M54V24616 (archivo pdf) en la parte inferior de esta página. Total 32 Páginas | ||
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¡¡SemicondSucetormiconductor
MSM54V24616
131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM
MSM54V24616
DESCRIPTION
The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated
in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous
interface.
FEATURES
• 131,072-words ¥ 16-bit ¥ 2 banks configuration
• Single 3.3 V±10% power supply
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outputs
rising edge
of
system
clock
• Auto precharge and controlled precharge
• Internal pipelined operation: column address can be changed every clock cycle
• Dual internal banks controlled by A9 (Bank Address: BA)
• Independent byte operation via DQML and DQMU
• Programmable burst sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (1, 2 and 3)
• Programmable Write burst (Burst write / Single write)
• Burst stop function (full-page burst)
• Power Down operation and Active Power Down (Clock Suspend) operation
• Auto refresh and Self refresh capability
• Refresh period: 1,024 cycles / 16 ms
• Package options:
50-pin plastic TSOP (type II) (TSOPII50-P-400-0.80-K) (Product : MSM54V24616-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM54V24616-8
MSM54V24616-10
MSM54V24616-12
Max.
Frequency
125 MHz
100 MHz
83MHz
Access Time (Max.)
tAC1
22 ns
tAC2
10 ns
tAC3
7 ns
27 ns 12 ns 9 ns
32 ns 15 ns 10 ns
Power Dissipation
Operating (Max.) Standby (Max.)
648 mW
540 mW
7.2 mW
468 mW
1
1 page  
¡ Semiconductor
MSM54V24616
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
VCC Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
VIN, VOUT
VCC, VCCQ
Tstg
PD*
IOS
Topr
*: Ta = 25°C
Recommended Operating Conditions
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Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC, VCCQ
VIH
VIL
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (CLK, CKE, CS,
RAS, CAS, WE, DQML, DQMU)
Input/Output Capacitance
(DQ0 - DQ15)
Symbol
CIN1
CIN2
COUT
Rating
–0.5 to 4.6
–0.5 to 4.6
–55 to 150
1
50
0 to 70
(Voltages referenced to VSS)
Unit
V
V
°C
W
mA
°C
Min.
2.97
2.0
–0.3
Typ.
3.3
—
—
(Voltages referenced to VSS = 0 V)
Max.
Unit
3.63
V
VCC + 0.3
V
0.8 V
Typ.
—
—
—
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
Unit
5 pF
5 pF
7 pF
5
5 Page 
¡ Semiconductor
MSM54V24616
TIMING WAVEFORM
Read & Write Cycle (Same Bank) @ CAS Latency = 2, Burst Length = 4
CLK
,CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tRC
CS
tRP
RAS
CAS
www.DataSheet4U.com
tRCD
ADDR
Ra Ca0
A9
A8 Ra
tOH
,,,,DQ Qa0Qa1Qa2Qa3
Rb Cb0
Rb
Db0 Db1 Db2 Db3
tAC tOHZ
tWR
WE
DQML
DQMU
Row Active Read Command
Row Active Write Command
Precharge Command
Precharge Command
11
11 Page | ||
| Páginas | Total 32 Páginas | |
| PDF Descargar | [ Datasheet M54V24616.PDF ] | |
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