PDF STF6NK70Z Data sheet ( Hoja de datos )

Número de pieza	STF6NK70Z
Descripción	N-channel Power MOSFET
Fabricantes	STMicroelectronics
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No Preview Available ! STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP6NK70Z 700 V < 1.8 Ω STF6NK70Z 700 V <1.8 Ω www.DataSheetS4TUW.c6oNmK70Z 700 V < 1.8 Ω 1. Limited only by maximum temperature allowed 5A 5 A(1) 5A ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100% avalanche rated ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application TO-220 TO-247 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STP6NK70Z STF6NK70Z STW6NK70Z August 2006 Marking P6NK70Z F6NK70Z W5NK90Z Package TO-220 TO-220FP TO-247 Rev 4 Packaging Tube Tube Tube 1/16 www.st.com 16 1 page STP6NK70Z - STF6NK70Z - STW6NK70Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 www.DataSheet4U.com IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc=125°C Gate body leakage current (VGS = 0) VGS = ± 20V Gate threshold voltage VDS = VGS, ID = 100µA Static drain-source on resistance VGS = 10 V, ID = 2.5 A 700 3 Typ. 3.75 1.5 Max. 1 50 ±10 4.5 1.8 Unit V µA µA µA V Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Ciss Coss Crss Forward transconductance VDS =15V, ID = 2.5A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 4.4 930 105 22 S pF pF pF Cosseq(2). Equivalent output capacitance VGS=0, VDS =0V to 560V 70 pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=350 V, ID= 2.5 A, RG=4.7Ω, VGS=10V (see Figure 18) 17 ns 18 ns 45 ns 30 ns Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD=560V, ID = 5A VGS =10V (see Figure 19) 34 47 nC 6.5 nC 17 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/16 5 Page STP6NK70Z - STF6NK70Z - STW6NK70Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com www.DataSheet4U.com 11/16 11 Page

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