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PDF STG3P3M25N60 Data sheet ( Hoja de datos )
| Número de pieza | STG3P3M25N60 | |
| Descripción | 3 Phase inverter IGBT - SEMITOP module | |
| Fabricantes | STMicroelectronics | |
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STG3P3M25N60
3 Phase inverter
IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
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Type
VCES
VCE(sat)(Max)
@ IC=7A, IC@80°C
Ts=25°C
STG3P3M25N60 600V
< 2.5V
25A
■ N-channel very fast PowerMESH™ IGBT
■ Lower on-voltage drop (Vcesat)
■ Lower CRES / CIES ratio (no cross-conduction
susceptbility)
■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation up to 70 KHz
■ New generation products with tighter
parameter distribution
■ One screw mounting
■ Compact design
■ Semitop®3 is a trademark of Semikron
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performances.
Applications
■ High frequency inverters
■ Motor drivers
SEMITOP®3
Internal schematic diagram
Order codes
Sales Type
STG3P3M25N60
Marking
G3P3M25N60
Package
SEMITOP®3
Packaging
SEMIBOX
May 2006
Rev1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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12
1 page  
STG3P3M25N60
Electrical characteristics
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Table 5. Switching on/off
Symbol
Parameter
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Test condictions
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 25°C
(see Figure 9)
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
(see Figure 9)
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
Min. Typ. Max. Unit
31
11
1600
ns
ns
A/µs
31
11.5
1500
ns
ns
A/µs
28 ns
100 ns
75 ns
66 ns
150 ns
130 ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
(see Figure 9)
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 125°C
(see Figure 9)
220
330
550
450
770
1220
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/12
5 Page 
STG3P3M25N60
5 Revision history
Table 9. Revision history
Date
Revision
29-May-2006
1
Initial release.
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Revision history
Changes
11/12
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| PDF Descargar | [ Datasheet STG3P3M25N60.PDF ] | |
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