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PDF STG3P2M10N60B Data sheet ( Hoja de datos )
| Número de pieza | STG3P2M10N60B | |
| Descripción | 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP2 module | |
| Fabricantes | ST Microelectronics | |
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STG3P2M10N60B
1-Phase bridge rectifier + 3 phase inverter
IGBT - SEMITOP®2 module
PRELIMINARY DATA
General features
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Type
VCES
VCE(sat)(Max)
@ IC=7A, IC@80°C
Ts=25°C
STG3P2M10N60B 600V
< 2.5V
10A
■ N-channel very fast PowerMESH™ IGBT
■ Lower on-voltage drop (Vcesat)
■ Lower CRES / CIES ratio (no cross-conduction
susceptbility)
■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation up to 70 KHz
■ New generation products with tighter
parameter distribution
■ Compact design
■ Semitop®2 is a trademark of semikron
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performances.
Applications
■ High frequency motor controls
■ Motor drivers
SEMITOP®2
Internal schematic diagram
Order codes
Sales type
STG3P2M10N60B
Marking
G3P2M10N60B
Package
SEMITOP®2
Packaging
SEMIBOX
May 2006
Rev1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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12
1 page  
STG3P2M10N60B
Electrical characteristics
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Table 5. Switching on/off
Symbol
Parameter
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Test condictions
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS= 25°C (see Figure 9)
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS=125°C (see Figure 9)
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS=25°C (see Figure 9)
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS=125°C (see Figure 9)
Min. Typ. Max. Unit
18.5
8.5
1060
ns
ns
A/µs
18.5
7
1000
ns
ns
A/µs
27 ns
72 ns
60 ns
56 ns
116 ns
105 ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS=25°C
(see Figure 9)
VCC = 300V, IC = 7A
RG= 22Ω, VGE= ±15V
TS= 125°C
(see Figure 9)
95 µJ
115 µJ
210 µJ
140 µJ
215 µJ
355 µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/12
5 Page 
STG3P2M10N60B
5 Revision history
Table 9. Revision history
Date
Revision
15-May-2005
1
Initial release.
www.DataSheet4U.com
Revision history
Changes
11/12
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STG3P2M10N60B.PDF ] | |
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