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PDF L2SC3837DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | L2SC3837DW1T1 | |
| Descripción | High-Frequency Amplifier Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
www.DataSheet4U.com
z Features
1.High transition frequency.(fT=1.5GHz)
2.Low output capacitance.(Cob=0.95pF)
L2SC3837DW1T1
6
5
4
1
2
3
SC-88/SOT-363
(3) (2) (1)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
18
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 150(TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
* 120mW per element must not be exceeded.
DEVICE MARKING
L2SC3837DW1T1=8P
Unit
V
V
V
mA
mW*
°C
°C
Q1
(4) (5)
Q2
(6)
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
hFE pairing
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
hFE1/hFE2
fT
30
18
3
-
-
27
-
0.5
600
Output capacitance
Cob -
*Transition frequency of the device.
Typ
-
-
-
-
-
-
-
1
1500
0.95
Max.
-
-
-
0.5
0.5
270
0.5
2
-
1.6
Unit
V
V
V
µA
µA
-
V
-
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=10V
VEB= 2 V
VCE/IC=10V/10mA
IC/IB=20mA/4mA
VCE/IC=10V/10mA
VCE/IC=10V/10mA,f=200MHz*
VCB/f=10V1MHz,IE=0A
L2SC3837DW1T1–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet L2SC3837DW1T1.PDF ] | |
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