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Número de pieza | MT6L52AE | |
Descripción | VHF-UHF Band Low Noise Amplifier Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MT6L52AE (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L52AE
MT6L52AE
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
Unit: mm
www.DataSheet4U.com
Three-pins (SSM/TESM) mold
products are corresponded.
Q1: SSM (TESM)
MT3S03AS
(MT3S03AT)
Q2: SSM (TESM)
MT3S04AS
(MT3S04AT)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1 Q2
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
(Note 1)
Tj
Tstg
10 10
55
22
40 40
10 10
100
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 0.003 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment (top view)
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MT6L52AE.PDF ] |
Número de pieza | Descripción | Fabricantes |
MT6L52AE | VHF-UHF Band Low Noise Amplifier Applications | Toshiba Semiconductor |
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