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PDF APT40GP90JDQ2 Data sheet ( Hoja de datos )
| Número de pieza | APT40GP90JDQ2 | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
®
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
www.DataShee•t4UUl.tcroamfast Tail Current shutoff
• SSOA Rated
APT94000GVP90JDQ2
APT40GP90JDQ2
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90JDQ2
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
900
±30
64
27
160
160A @ 900V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
900
3 4.5 6 Volts
3.2 3.9
2.7
350
1500
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
7,000
Cies
1,000
500
100
50
Coes
Cres
10 0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
www.DataSheet4U.com
0.50
APT40GP90JDQ2
180
160
140
120
100
80
60
40
20
0 0 200 400 600 800 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.40
D = 0.9
0.30
0.20
0.10
0
10-5
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp. (°C)
RC MODEL
0.0940
0.0117
Power
(Watts)
0.204
0.136
Case temperature. (°C)
0.142
1.07
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
100
50
Fmax = min (fmax, fmax2)
10
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
5
TTDJC===50172%55°°CC
1 VRCGE==4.630Ω0V
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10 20 30 40 50 60
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT40GP90JDQ2.PDF ] | |
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