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PDF APT40GP60B2DF2 Data sheet ( Hoja de datos )
| Número de pieza | APT40GP60B2DF2 | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APT40GP60B2DF2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TYPICAL PERFORMANCE CURVES
APT40GP60APBT402GPD60BF2D2F2
600V
POWER MOS 7® IGBT
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
www.DataShee•t4LUo.cowm Conduction Loss
• 100 kHz operation @ 400V, 41A
GC E
C
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 26A
• SSOA rated
G
E
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT40GP60B2DF2 UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
62
160
160A @ 600V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
600
3 4.5 6
2.2 2.7
2.1
500
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
µA
nA
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
10
Coes
Cres
0
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
www.DataSheet4U.com
0.25
APT40GP60B2DF2
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.9
0.20
0.15
0.10
0.05
0 10-5
0.7
0.5 Note:
t1
0.3
t2
Duty Factor D = t1/t2
0.1 Peak TJ = PDM x ZθJC + TC
0.05
SINGLE PULSE
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Junction
temp. ( ”C)
RC MODEL
0.0106
0.00663F
Power
(Watts)
0.0868
0.0106F
Case temperature
0.133
0.262F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
260
100
Fmax = min(fmax1, fmax 2 )
50
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
TJ = 125°C
TC = 75°C
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
D = 50 %
VCE = 400V
RG = 5 Ω
10
Pdiss
=
TJ − TC
R θJC
20 30 40 50 60 70 80
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT40GP60B2DF2.PDF ] | |
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