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PDF W29NK50Z Data sheet ( Hoja de datos )
| Número de pieza | W29NK50Z | |
| Descripción | STW29NK50Z | |
| Fabricantes | STMicroelectronics | |
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STW29NK50Z
N-CHANNEL 500 V - 0.105Ω - 31A TO-247
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
PW
STW29NK50Z 500 V < 0.13 Ω 31 A 350 W
I TYPICAL RDS(on) = 0.105 Ω
I EXTREMELY HIGH dv/dt CAPABILITY
I 100% AVALANCHE TESTED
I GATE CHARGE MINIMIZED
I VERY LOW INTRINSIC CAPACITANCES
I VERY GOOD MANUFACTURING
REPEATIBILITY
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DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding application. Such series
complements ST full range of high vltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
I HIGH CURRENT, HIGH SPEED SWITCHING
I IDEAL FOR OFF-LINE POWER SUPPLIES
I WELDING MACHINES
I LIGHTING
Figure 1: Package
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER
STW29NK50Z
MARKING
W29NK50Z
PACKAGE
TO-247
PACKAGING
TUBE
October 2004
Rev. 1
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1 page  
STW29NK50Z
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
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Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVDSS vs Temperature
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| PDF Descargar | [ Datasheet W29NK50Z.PDF ] | |
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