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PDF MBRF8100 Data sheet ( Hoja de datos )
| Número de pieza | MBRF8100 | |
| Descripción | (MBRF830 - MBRF8100) SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Galaxy Semi-Conductor Holdings Limited | |
| Logotipo |  |
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BL GALAXY ELECTRICAL
SCHOTTKY BARRIER RECTIFIER
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
www.DataMShEeCetH4UA.NcoImCAL DATA
Cas e:JEDEC ITO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight:0.064 ounces,1.81 gram
MBRF830 - - - MBRF8100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
ITO-220AC
0.405(10.27)
0.383(9.72)
PIN
12
0.191(4.85)
0.171(4.35)
0.060(1.52)
0.140(3.56) DIA
0.130(3.30)
0.350(8.89)
0.330(8.38)
0.188(4.77)
0.172(4.36)
0.110(2.80)
0.100(2.54)
0.131(3.39)
0.122(3.08) DIA
0.110(2.80)
0.100(2.54)
0.105(2.67)
0.095(2.41)
0.037(0.94)
0.027(0.69)
PIN1
0.205(5.20)
0.195(4.95)
PIN2
Dimensions in inches and(millimeters)
0.022(0.55)
0.014(0.36)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNITS
830 835 840 845 850 860 880 8100
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
VRRM 30 35 40 45 50 60 80 100
VRMS 21 25 28 32 35 42 56 70
VDC
30
35
40 45 50
60 80 100
V
V
V
Maximum average forw ard total device11111111
m rectif ied current @TC = 125°C
IF(AV)
8.0
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
150
A
Maximum forw ard
v oltage
(Note 1)
(IF=8.0A ,TC=125 )
(IF=8.0A,TC=25 )
(IF=16A ,TC=25 )
VF
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85 V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @TC=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
IR
RθJ C
TJ
TSTG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
0.5
mA
50
K/W
www.galaxycn.com
Document Number 0267030
BLGALAXY ELECTRICAL
1.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRF8100.PDF ] | |
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