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PDF BUF650 Data sheet ( Hoja de datos )
| Número de pieza | BUF650 | |
| Descripción | Silicon NPN High Voltage Switching Transistor | |
| Fabricantes | TEMIC Semiconductors | |
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Hay una vista previa y un enlace de descarga de BUF650 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BUF650
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
www.DataSheet4U.coDm Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25° C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
500
700
9
10
15
5
7.5
70
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
Value
1.78
Unit
K/W
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
1 (8)
1 page  
BUF650
Typical Characteristics (Tcase = 25_ C unless otherwise specified)
www.DataSheet4U.com
12
10
8
6
4 0.1 x IC < IB2 < 0.5 x IC
VCESat < 2V
2
100
1.78 K/W
10 12.5 K/W
1
25 K/W
0.1
50 K/W
RthJA = 85 K/W
0.01
0
0
95 10562
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
Figure 4. VCEW – Diagram
0.001
0
95 10563
25 50 75 100 125 150
Tcase ( °C )
Figure 7. Ptot vs.Tcase
10
1000mA
8 780mA
580mA
400mA
6
4
2
0
0
95 10566
190mA
95mA
IB = 49mA
4 8 12 16 20
VCE – Collector Emitter Voltage ( V )
Figure 5. IC vs. VCE
10
IC = 1A 2A
1
4A
0.1
8A
6A
0.01
0.01
95 10567
0.1 1
IB – Base Current ( A )
Figure 8. VCEsat vs. IB
10
100
10V
10
5V
VCE = 2V
100
125°C
25°C
Tj = 75°C
10
1
0.01
95 10564
0.1 1 10
IC – Collector Current ( A )
Figure 6. hFE vs. IC
100
1
0.01
95 10565
0.1 1 10
IC – Collector Current ( A )
Figure 9. hFE vs. IC
100
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
5 (8)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUF650.PDF ] | |
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