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PDF BUK7C08-55AITE Data sheet ( Hoja de datos )
| Número de pieza | BUK7C08-55AITE | |
| Descripción | TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7C08-55AITE
TrenchPLUS standard level FET
M3D323 Rev. 01 — 19 August 2003
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ESD and overtemperature protection.
Product availability:
BUK7C08-55AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines
s Automotive and power switching
s Electrical Power Assisted Steering
s Fan control.
1.4 Quick reference data
s VDS ≤ 55 V
s ID ≤ 130 A
s RDSon = 6.8 mΩ (typ)
s VF = 658 mV (typ)
s SF = −1.54 mV/K (typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT427, simplified outline and symbol
Pin Description Pin Description Simplified outline
1 gate (g)
5 cathode (k)
2 Isense
3 anode (a)
6 Kelvin source
7 source (s)
mb
4 drain (d)
mb mounting base;
connected to
drain (d)
1234567
Front view
MBK128
SOT427 (D2-PAK)
Symbol
da
g
MBL362
sk
Isense
Kelvin source
1 page  
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
www.DataSheet4U.com
IDSS drain-source leakage current
V(BR)GSS
IGSS
gate-source breakdown
voltage
gate-source leakage current
RDSon
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IG = ±1 mA;
−55 °C < Tj < +175 °C
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A;
Figure 7 and 8
RD(Is)on
drain-Isense on-state
resistance
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 mA;
Figure 18
Tj = 25 °C
Tj = 175 °C
VF forward voltage temperature IF = 250 µA
sense diode
SF
temperature coefficient
IF = 250 µA;
temperature sense diode
−55 °C < Tj < +175 °C
Vhys forward voltage hysteresis 125 µA < IF < 250 µA
temperature sense diode
ID/Isense
ratio of drain current to sense VGS > 5 V;
current
−55 °C < Tj < +175 °C
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
VGS = 10 V; VDS = 44 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
9397 750 11696
Product data
Rev. 01 — 19 August 2003
Min
55
50
2
1
-
-
-
20
-
-
-
-
1.32
3.04
648
−1.4
25
450
-
-
-
-
-
-
Typ Max Unit
--V
--V
34V
--V
- 4.4 V
0.1 10
µA
- 250 µA
22 -
V
22
1 000
nA
- 10 µA
6.8 8
- 16
mΩ
mΩ
1.55
3.57
658
−1.54
32
500
1.82
4.19
668
−1.68
50
550
Ω
Ω
mV
mV/K
mV
-
116
19
51
4 200
920
500
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
6. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)
SOT427
www.DataSheet4U.com
D1
D
HD
E
4
17
e e eee e
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 b
c
D
max.
D1
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
E
10.30
9.70
e
1.27
Lp HD Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT427
IEC
Fig 20. SOT427 (D2-PAK).
9397 750 11696
Product data
REFERENCES
JEDEC
EIAJ
Rev. 01 — 19 August 2003
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-04-18
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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