|
|
PDF HY5MS7B2BLFP Data sheet ( Hoja de datos )
| Número de pieza | HY5MS7B2BLFP | |
| Descripción | Mobile DDR SDRAM 512M | |
| Fabricantes | Hynix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY5MS7B2BLFP (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O
Document Title
512MBit (4Bank x 4M x 32bits) MOBILE DDR SDRAM
Revision History
www.DataSheet4U.Rcoemvision No.
History
0.1 - Initial Draft
0.2 - Added SRR function and timing diagram
- Updated some AC parameters (tAC, tDQSCK, tHZ, tIS, tIH,
0.3
tIPW, tDIPW, tRFC, tXSR)
- Updated IDD5
- Corrected editorial errors in descriptions and figures
- Updated Status Register
- Rearranged pages to be more systematic
- Corrected editorial errors in descriptions and figures
0.4 - Corrected AC Input High/Low Level Voltage (VIH / VIL =
0.8*VDDQ / 0.2*VDDQ)
- Updated IDD6 current
- Updated tWTR in LPDDR333
1.0 - Reorganized and updated AC and DC Operating Conditions
- Modified Status Register Read Method
1.1 - Modified IDD4R and IDD4W
- Added DPD option
Draft Date
Sep.2006
Jan.2007
Feb. 2007
Feb. 2007
Mar. 2007
Apr. 2007
Remark
Preliminary
Preliminary
Preliminary
Preliminary
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.1 / Apr. 2007
1
1 page  
11
Mobile DDR SDRAM 512Mbit (16M x 32bit)
HY5MS7B2BLF(P) Series
INFORMATION for Hynix KNOWN GOOD DIE
With the advent of Multi-Chip package (MCP), Package on Package (PoP) and System in a Package (SiP) applications,
customer demand for Known Good Die (KGD) has increased.
Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu-
tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies
such as systems-in-a-package (SIP) and multi-chip package (MCP) to reduce the board area required, making them
ideal for hand-held PCs, and many other portable digital applications.
www.DataSheet4U.com
Hynix Mobile SDRAM will be able to continue its constant effort of enabling the advanced package products of all appli-
cation customers.
- Please Contact Hynix Office for Hynix KGD product availability and informations.
Rev 1.1 / Apr. 2007
5
5 Page 
11
Mobile DDR SDRAM 512Mbit (16M x 32bit)
HY5MS7B2BLF(P) Series
REGISTER DEFINITION III
Status Register (SR) for Mobile DDR SDRAM
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
010000000000000
www.DataSheet4UD.cQo1m5 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Density
010
- DW
Refresh Rate
Revision Identification Manufacturers Identification
0 1 X X X X1) X1) X1) X1) 0 1 1 0
DW (Device Width)
DQ11 Device Width
0 16 bits
1 32 bits
Density
DQ15 DQ14 DQ13 Density
000
128
001
256
010
512
011
1024
1 0 0 Reserved
1 0 1 Reserved
1 1 0 Reserved
1 1 1 Reserved
Refresh Rate
DQ10 DQ9
00
01
01
10
10
11
11
DQ8 Refresh Rate
x 42)
04
12
01
1 0.5
0 0.25
1 0.253)
Manufacturers Identification
DQ3
0
x
DQ2
1
x
DQ1
1
x
DQ0
0
x
Manufacturer
Hynix
Reserved or
other companies
Notes:
1. The revision number starts at ‘0000’ and increments by ‘0001’ each time a change in the manufacturer’s specification, IBIS, or
process occurs.
2. Low temperature out of range.
3. High temperature out of range - no refresh rate can guarantee functionality.
4. The refresh rate multiplier is based on the memory’s temperature sensor.
5. Required average periodic refresh interval = tREFI * multiplier.
6. Status Register is only for Read.
7. To read out Status Register values, BA[1:0] set to 01b and A[12:0] set to all 0 with MRS command followed by Read command
with that BA[1:0] are Don’t care and A[12:0] set to all 0.
Rev 1.1 / Apr. 2007
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HY5MS7B2BLFP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY5MS7B2BLF | Mobile DDR SDRAM 512M | Hynix |
| HY5MS7B2BLFP | Mobile DDR SDRAM 512M | Hynix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |