|
|
PDF STI30NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STI30NM60ND | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STI30NM60ND (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
STP/F30NM60ND-STW30NM60ND
STB30NM60ND-STI30NM60ND
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247
FDmesh™ II Power MOSFET (with fast diode)
Preliminary Data
Features
Type
www.DataSheet4U.ScoTmB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
VDSS
600V
600V
600V
600V
600V
RDS(on) Max ID
< 0.13Ω
< 0.13Ω
< 0.13Ω
25A
25A
25A(1)
< 0.13Ω 25A
< 0.13Ω 25A
1. Limited only by maximum temperature allowed
■ The world’s best RDS(on)*in TO-220 amongst
the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
1 page  
STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Electrical characteristics
www.DataSheet4U.com
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25A, VGS = 0
ISD = 25A, VDD = 60V
di/dt=100A/µs
(see Figure 4)
ISD = 25A,VDD = 60V
di/dt=100A/µs,
TJ = 150°C
(see Figure 4)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
TBD
TBD
TBD
25
100
1.6
A
A
V
ns
µC
A
TBD
TBD
TBD
ns
µC
A
5/15
5 Page 
STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data
www.DataSheet4U.com
Dim
Min
A 4.4
A1 2.49
A2 0.03
B 0.7
B2 1.14
C 0.45
C2 1.23
D 8.95
D1
E 10
E1
G 4.88
L 15
L2 1.27
L3 1.4
M 2.4
R
V2 0°
D²PAK mechanical data
mm
Typ Max Min
4.6 0.173
2.69
0.098
0.23
0.001
0.93
0.027
1.7 0.044
0.6 0.017
1.36
0.048
9.35
0.352
8
10.4
0.393
8.5
5.28
0.192
15.85
0.590
1.4 0.50
1.75
0.055
3.2 0.094
0.4
4°
inch
Typ
0.315
0.334
0.015
Max
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.625
0.55
0.68
0.126
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STI30NM60ND.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STI30NM60N | N-channel MOSFET | STMicroelectronics |
| STI30NM60ND | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |