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PDF STW8NC80Z Data sheet ( Hoja de datos )
| Número de pieza | STW8NC80Z | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
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STW8NC80Z
N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW8NC80Z
800 V < 1.5 Ω
6.7 A
www.DataSheet4Un.coTmYPICAL RDS(on) = 1.3 Ω
n EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤6.7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
December 2001
Value
800
800
±25
6.7
4.2
27
160
1.28
±50
3
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STW8NC80Z
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STW8NC80Z.PDF ] | |
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