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PDF STW8NK80Z Data sheet ( Hoja de datos )
| Número de pieza | STW8NK80Z | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
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STP8NK80Z - STP8NK80ZFP
STW8NK80Z
N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
www.DataSheet4U.com Type
STP8NK80Z
STP8NK80ZFP
STW8NK80Z
VDSS
800 V
800 V
800 V
RDS(on)
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
ID
6.2 A
6.2 A
6.2 A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Application
■ Switching applications
TO-220
3
2
1
TO-220FP
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STP8NK80Z
P8NK80Z
STP8NK80ZFP
STW8NK80Z
P8NK80ZFP
W8NK80Z
Package
TO-220
TO-220FP
TO-247
Packaging
Tube
Tube
Tube
July 2007
Rev 5
1/15
www.st.com
15
1 page  
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Electrical characteristics
www.DataSheet4U.com
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 6.2 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.2 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 23)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
6.2 A
24.8 A
1.6 V
460
2990
13
ns
nC
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/15
5 Page 
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/15
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| PDF Descargar | [ Datasheet STW8NK80Z.PDF ] | |
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