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PDF STW8NA60 Data sheet ( Hoja de datos )
| Número de pieza | STW8NA60 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STW8NA60 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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STW8NA60
® STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 8NA60
www.DataSheet4U.ScoTmH8NA60F I
V DSS
600 V
600 V
RDS(on)
<1Ω
<1Ω
ID
8A
5A
s TYPICAL RDS(on) = 0.92 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Valu e
ST W8NA60 STH8NA60FI
6 00
6 00
± 30
85
5.1 3.2
32 32
150 60
1.2 0.48
4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
1 page  
Transconductance
STW8NA60-STH8NA60FI
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STW8NA60.PDF ] | |
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