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Número de pieza | SPI80N06S-08 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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SIPMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
P-TO263-3-2
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
7.7 mΩ
80 A
P-TO262-3-1
P-TO220-3-1
• Repetive Avalanche up to
Tjmax = 175 °C
• dv /dt rated
VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code Marking
Q670T6C0=-S2651°8C5, V GS1=N10060V8
Q670T6C0=-S160108°7C, V 1GSN=016008V
Q67060-S6186 1N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current1)
I D T C=25 °C, V GS=10 V
80 A
T C=100 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω,
V DD=25 V
Avalanche energy, periodic2)
E AR T j≤175 °C
Reverse diode dv /dt 2)
dv /dt
I D=80 A, V DS=40 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
80
320
700 mJ
30
6 kV/µs
±20
300
-55 ... +175
55/175/56
V
W
°C
2004-11-30
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
140
10 V
8 V 6.5 V
7V
120
100
80
60
40
20
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
6V
20 4.5 V
5V
5.5 V
5.5 V
5V
4.5 V
15
10
5
6V
6.5 V
7V
8V
10 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
0
3 0 20 40 60 80
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100 120
80
140 70
120 60
100 50
80 40
60 30
40 20
20
0
0
175 °C
25 °C
246
V GS [V]
10
0
8 0 20 40 60 80
I D [A]
Rev. 1.0
page 5
2004-11-30
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPI80N06S-08.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPI80N06S-08 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N06S-08 | Power-Transistor | Infineon Technologies |
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