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Número de pieza | APM3011NU | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Anpec Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM3011NU (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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N-Channel Enhancement Mode MOSFET
Features
• 30V/40A ,
RDS(ON)=9mΩ(typ.) @ VGS=10V
RDS(ON)=13mΩ(typ.) @ VGS=4.5V
• Super High Dense Cell Design
www.DataSheet4U.c•om Avalanche Rated
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Pin Description
GD
S
Top View of TO-252
(2)
D1
Applications
• Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
(1)
G1
S1
(3)
N-Channel MOSFET
APM 3011N
Lead Free C ode
H andling C ode
Temp. Range
Package Code
Package Code
U : TO -252
O perating Junction T em p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube TR : Tape & Reel
Lead Free C ode
L : Lead F ree D evice B lank : O riginal D evice
APM3011N U :
APM 3011N
XXXXX
X X X X X - D ate C ode
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
www.anpec.com.tw
1 page APM3011NU
Typical Characteristics (Cont.)
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Output Characteristics
40
V =5,6,7,8,9,10V
GS
35 4V
30
25
20 3.5V
15
10 3V
5
2.5V
0
0 2 4 6 8 10
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
24
20
16
12
V =10V
GS
8
V =4.5V
GS
4
0
0 5 10 15 20 25 30 35 40
ID - Drain Current (A)
Transfer Characteristics
40
36
32
28 T =125oC
j
24
20
T =25oC
T =-55oC
j
j
16
12
8
4
0
012345
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
5
www.anpec.com.tw
5 Page APM3011NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
www.DataSheet4U.com
T1
Application
TO-252
A
330 ±3
F
B
100 ± 2
D
C
13 ± 0. 5
D1
J
2 ± 0.5
Po
T1 T2
16.4 + 0.3
-0.2
2.5± 0.5
P1 Ao
W
16+ 0.3
- 0.1
Bo
P
8 ± 0.1
Ko
E
1.75± 0.1
t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
11
www.anpec.com.tw
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet APM3011NU.PDF ] |
Número de pieza | Descripción | Fabricantes |
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APM3011NU | N-Channel Enhancement Mode MOSFET | Anpec Electronics |
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