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PDF HX6356 Data sheet ( Hoja de datos )
| Número de pieza | HX6356 | |
| Descripción | 32K x 8 STATIC RAM-SOI | |
| Fabricantes | Honeywell | |
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Aerospace Electronics
32K x 8 STATIC RAM—SOI
HX6356
FEATURES
RADIATION
OTHER
• Fabricated with RICMOS™ IV Silicon on Insulator (SOI)
0.75
µm
Process
(L
eff
=
0.6
µm)
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
www.DataSheet4U.com
• Dynamic and Static Transient Upset Hardness
through 1x1011 rad(Si)/s
• Listed On SMD# 5962-95845
• Fast Read/Write Cycle Times
≤ 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
• Typical Operating power < 15 mW/MHz
• Asynchronous Operation
• Dose Rate Survivability through 1x1012 rad(Si)/s
• CMOS or TTL Compatible I/O
• Soft Error Rate of <1x10-10 upsets/bit-day
in Geosynchronous Orbit
• Latchup Free
• Single 5 V ± 10% Power Supply
• Packaging Options
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V ±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS™ IV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µm
effective gate length—Leff). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.
1 page  
HX6356
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDDSB1 Static Supply Current
Typical Worst Case (2)
(1) Min Max
Units
0.2 1.5 mA
IDDSBMF Standby Supply Current - Deselected
0.2
1.5 mA
IDDOPW Dynamic Supply Current, Selected (Write)
3.4
4.0 mA
IDDOPR Dynamic Supply Current, Selected (Read)
2.8
4.0 mA
II Input Leakage Current
-1 +1 µA
IOZ Output Leakage Current
-1 +1 µA
VIL
www.DataSheet4U.com
Low-Level Input Voltage
CMOS 1.7
TTL
0.3xVDD
0.8
V
V
Test Conditions
VIH=VDD, IO=0
VIL=VSS, f=0MHz
NCS=VDD, IO=0,
f=40 MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
March Pattern
VDD = 4.5V
VIH High-Level Input Voltage
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
CMOS 3.2 0.7xVDD
TTL 2.2
0.3 0.4
0.005
4.3
4.5
4.2
VDD-0.1
0.1
V March Pattern
V VDD = 5.5V
V VDD = 4.5V, IOL = 10 mA (CMOS)
= 8 mA (TTL)
V VDD = 4.5V, IOL = 200 µA
V VDD = 4.5V, IOH = -5 mA
V VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
2.9 V
249Ω
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5
5 Page 
36-LEAD FLAT PACK—Top Braze (22019627-001)
E
1 22019627-001
HX6356
Top
View
H
www.DataSheet4U.com J
I
L
C
Non-Conductive
Tie-Bar
Ceramic
A Body
1 22019627-001
Bottom
View
b
(width)
Kovar
Lid [3]
Kovar Lead [1]
e
(pitch)
All dimensions are in inches
A 0.085 ± 0.010
b 0.008 ± 0.002
C 0.005 to 0.0075
D 0.650 ± 0.010
E 0.630 ± 0.007
M e 0.025 ± 0.002 [2]
F 0.425 ± 0.005 [2]
G 0.525 ± 0.005
H 0.135 ± 0.005
I 0.030 ± 0.005
S
J 0.080 typ.
L 0.285 ± 0.015
M 0.009 ± 0.003
S 0.113 ± 0.010
[1] Parts delivered with leads unformed
[2] At tie bar
[3] Lid tied to VSS
Pin 1 Index Bar
DYNAMIC BURN-IN DIAGRAM
STATIC BURN-IN DIAGRAM
VSS
F16
F7
F6
F5
F4
F3
F2
F8
F13
F14
F1
F1
F1
R
R
R
R
R
R
R
R
R
R
R
R
R
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VSS
VDD
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQO
DQ1
DQ2
17
18
VDD
VSS
VSS
VDD
NWE
CE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
VSS
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VDD
F0
F17
F15
F12
F11
F10
F17
F9
F17
F1
F1
F1
F1
F1
VSS
VDD = 5.6V, R ≤ 10 KΩ, VIH = VDD, VIL = VSS
Ambient Temperature ≥ 125 °C, F0 ≥ 100 KHz Sq Wave
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.
11
VSS
R
R
R
R
R
R
R
R
R
R
R
R
R
NC
1 VSS
2 VDD
3 A14
4 A12
5 A7
6 A6
7 A5
8 A4
9 A3
10 A2
11 A1
12 A0
13 DQO
14 DQ1
15 DQ2
16
17 VDD
18 VSS
VSS 36
VDD 35
NWE 34
CE 33
A13 32
A8 31
A9 30
A11 29
NOE 28
A10 27
NCS 26
DQ7 25
DQ6 24
DQ5 23
DQ4 22
DQ3 21
VDD 20
VSS 19
VDD
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VSS
VDD = 5.5V, R ≤ 10 KΩ
Ambient Temperature ≥ 125 °C
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HX6356.PDF ] | |
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