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PDF STY80NM60N Data sheet ( Hoja de datos )
| Número de pieza | STY80NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Features
STY80NM60N
N-channel 600 V - 0.035 Ω - 80 A - Max247
second generation MDmesh™ Power MOSFET
Preliminary Data
www.DataSheet4U.com Type
VDSS
RDS(on)
ID
Pw
STY80NM60N 600 V < 0.040 Ω 80 A 560 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
23
1
Max247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STY80NM60N
Marking
80NM60N
Package
Max247
Packaging
Tube
December 2007
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
www.st.com
9
1 page  
STY80NM60N
3 Test circuit
Test circuit
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
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Figure 4. Test circuit for inductive load
Figure 5. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STY80NM60N.PDF ] | |
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