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PDF IXGT50N60B2 Data sheet ( Hoja de datos )
| Número de pieza | IXGT50N60B2 | |
| Descripción | (IXGx50N60B2) HiPerFASTTM IGBT B2-Class High Speed IGBTs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFASTTM IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 75 A
= 2.0 V
= 65 ns
www.DataSheetS4Uym.cobmol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
200 A
ICM = 80
A
400
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 125°C
50 µA
1 mA
±100 nA
1.6 2.0 V
1.5 V
TO-247
(IXGH)
TO-268
(IXGT)
G
CE
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High frequency IGBT
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99145A(03/04)
1 page  
IXGH 50N60B2
IXGT 50N60B2
350
300
250
200
150
100
www.DataSheet4U.com
50
Fig. 13. De pendence of Turn-Off
Sw itching Tim e on Te m perature
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
VCE = 480V
IC = 80A
IC = 40A
IC = 20A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
90
80
70
60
50
40
30
20
10
0
100
Fig. 14. Reverse -Bias
Safe Operating Are a
TJ = 125º C
RG = 10Ω
dV/dT < 10V/ns
200 300 400 500
V C E - Volts
600
16
14
12
10
8
6
4
2
0
0
0.35
Fig. 15. Gate Charge
VCE = 300V
IC = 40A
IG = 10mA
10000
1000
Fig. 16. Capacitance
f = 1 MHz
Cies
100 Coes
30 60 90 120
Q G - nanoCoulombs
150
10
0
5 10 15 20 25
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
Cres
30 35
40
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
10
Pulse Width - milliseconds
100
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGT50N60B2.PDF ] | |
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