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PDF APT35GP120JDQ2 Data sheet ( Hoja de datos )
| Número de pieza | APT35GP120JDQ2 | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
®
APT1325G0P01V20JDQ2
APT35GP120JDQ2
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• RBSOA Rated
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EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120JDQ2
UNIT
VCES
VGE
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
64
26
140
140A @ 960V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
1200
3 4.5 6 Volts
3.3 3.9
3
350
3000
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
10,000
Cies
1,000
500
100
50
Coes
Cres
10 0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GP120JDQ2
160
140
120
100
80
60
40
20
0 0 100 200 300 400 500 600 700 800 900 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.45
0.40
D = 0.9
0.35
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0.30
0.7
0.25
0.20
0.15
0.10
0.5
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp. ( ºC)
RC MODEL
0.0966
0.00997
Power
(Watts)
0.228
0.158
Case temperature
0.116
1.958
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
100
50
Fmax = min (fmax, fmax2)
10
TTDJC===50172%55°°CC
3 VRCGE==5Ω800V
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
5 20 30 40 50
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT35GP120JDQ2.PDF ] | |
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