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PDF HBF421 Data sheet ( Hoja de datos )
| Número de pieza | HBF421 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 1/4
Description
Video B-class Power stages in TV-receivers
www.DataSheet4U.com
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................................... 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................................................ -300 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current ........................................................................................................................................ -50 mA
IBM Peak Base Current ................................................................................................................................... -50 mA
ICM Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min. Typ. Max.
-300
-
-
-300
-
-
-5 -
-
- - -100
- - -100
- - -0.6
50 -
-
60 -
-
Unit
V
V
V
nA
nA
V
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBF421
HSMC Product Specification
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HBF421.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HBF421 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
| HBF422 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
| HBF423 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
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