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PDF AP9936M Data sheet ( Hoja de datos )
| Número de pieza | AP9936M | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9936M
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ DC-DC Application
▼ Dual N-channel Device
www.DataSheet4▼U.cSoumrface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
50mΩ
5A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
30
± 20
5
4
40
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
20102202
1 page  
AP9936M
12
I D =5A
10 V DS =15V
www.DataSheet4U.com8
6
4
2
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
8 15 22 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
10
Tj=150 o C
1
Tj=25 o C
0.1
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
2.5
2
1.5
1
0.5
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP9936M.PDF ] | |
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