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PDF AP9928EO Data sheet ( Hoja de datos )
| Número de pieza | AP9928EO | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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AP9928EO
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Optimal DC/DC battery application
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G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BVDSS
RDS(ON)
ID
20V
23mΩ
5A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
Data and specifications subject to change without notice
200206031
1 page  
AP9928EO
8
I D =5A
7
6
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5
4
VDS =10V
VDS =15V
VDS =20V
3
2
1
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
Crss
100
10
1
7 13 19 25
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0.2
0.5
V SD (V)
0.8
1.1
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.2
0.8
0.4
0
-50 0
50 100 150
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP9928EO.PDF ] | |
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