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PDF AP9912H Data sheet ( Hoja de datos )
| Número de pieza | AP9912H | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9912H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP9912H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
www.DataSheet4▼U.cFomast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
85mΩ
10A
GD
S
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9912J) are available for low-profile applications.
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
± 12
10
7
20
18
0.144
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
6.6
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200110031
1 page  
AP9912H/J
12
I D =5A
9
www.DataSheet4U.com
6
V DS =10V
V DS =13V
V DS =16V
3
0
0246
Q G , Total Gate Charge (nC)
8
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1
7 13 19 25
V DS (V)
Fig 10. Typical Capacitance Characteristics
1.6
100
10
Tj=150 o C
1
Tj=25 o C
1.2
0.8
0.1
0.2
0.6
V SD (V)
1
1.4
Fig 11. Forward Characteristic of
Reverse Diode
0.4
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP9912H.PDF ] | |
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