|
|
Número de pieza | SW640 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Samwin | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SW640 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SAMWIN
SW640
Features
N-Channel MOSFET
BVDSS (Minimum)
RDS(ON) (Maximum)
ID
Qg (Typical)
PD (@TC=25 )
: 200 V
: 0.18 ohm
: 18A
: 40 nc
: 139 W
www.DataSheet4U.com
General Description
This power MOSFET is produced in SAMWIN with
advanced VDMOS process, planar stripe.This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for
half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching
mode power appliances.
D
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG,TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@Tc=25 )
Continuous Drain Current (@Tc=100 )
Drain Current Pulsed
(Note 1)
Gate to Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Total Power Dissipation (@Tc=25 )
Derating Factor above 25
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
200
18
11.4
72
30
250
13.9
5.5
139
1.10
-55~+150
300
Thermal Characteristics
Symbol
R JC
R CS
R JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 0.9
- - 0.5
- - 62.5
REV0.2
1/6
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
05.6.9
1 page SAMWIN
SW640
50K
200nF
300nF
VGS
1mA
www.DataSheet4U.com
Same Type
as DUT
VGS
10V
VDS
Qgs
Qg
Qgd
DUT
Charge
VDS
10V
Pulse
Generator
RG
Fig 12. Gate Charge test Circuit & Waveforms
RL
VDD
VDS
(0.5 rated VDS)
90%
DUT
Vin
10%
td(on) tr
ton
Fig 13. Switching test Circuit & Waveforms
tf
td(off)
toff
VDS
RG
10V
L
VDD
EAS=
1
---
2
LLIAS2------B--V--D--S-S--
BVDSS-VDD
BVDSS
DUT
IAS
VDD ID(t)
VDS(t)
tp Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
REV0.2
05.6.9
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SW640.PDF ] |
Número de pieza | Descripción | Fabricantes |
SW640 | N-Channel MOSFET | Samwin |
SW640 | Battery | Shenzhen |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |