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Número de pieza | IPB12CNE8NG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
85 V
12.4 mΩ
67 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB12CN10N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Package
Marking
PG-TO263-3
12CNE8N
PG-TO252-3
12CNE8N
PG-TO262-3
12CNE8N
PG-TO220-3
12CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=67 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=67 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
67
48
268
154
6
±20
125
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2006-02-17
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
250
10 V
8V
7V
200
150
6.5 V
100
6V
50 5.5 V
5V
0 4.5 V
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
250
4
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
5V
25
20 5.5 V
15
6V
10 10 V
5
0
5 0 20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
80
100
200 80
150 60
100
50
0
0
Rev. 1.01
175 °C
25 °C
246
V GS [V]
40
20
0
80
page 5
20 40 60
I D [A]
80
2006-02-17
5 Page www.DataSheet4U.com
PG-TO252-3: Outline
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Rev. 1.01
page 11
2006-02-17
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IPB12CNE8NG.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB12CNE8NG | Power-Transistor | Infineon Technologies |
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