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PDF AP4569GH Data sheet ( Hoja de datos )
| Número de pieza | AP4569GH | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4569GH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
Description
D1/D2
S1 G1
S2
G2
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
40V
52mΩ
14A
-40V
90mΩ
-11A
D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case3
Thermal Resistance Junction-ambient3
G1 G2
S1
Rating
N-channel P-channel
40 -40
±20 ±20
14 -11
8.7 -6.6
50 -50
15.6
0.125
-55 to 150
-55 to 150
Max.
Max.
Value
8
110
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200524051-1/7
1 page  
www.DataSheet4U.com
N-Channel
12
ID=6A
V DS = 30 V
9
6
3
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V DS =5V
15
T j =25 o C
10
T j =150 o C
5
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
AP4569GH
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5/7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4569GH.PDF ] | |
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