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PDF AP4513GD Data sheet ( Hoja de datos )
| Número de pieza | AP4513GD | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
▼ RoHS Compliant
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4513GD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Repetitive Avalanche Energy1
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35 -35
±20 ±20
5.8 -4.3
4.7 -3.4
20 -20
2
0.016
12.5 12.5
5 -5
0.05 0.05
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200615051-1/7
1 page  
www.DataSheet4U.com
N-Channel
12
ID=5A
V DS =2 8 V
9
6
3
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1 T A =25 o C
Single Pulse
0.01
0.1
1
1s
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
AP4513GD
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =90oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4513GD.PDF ] | |
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