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PDF TSC5304D Data sheet ( Hoja de datos )

Número de pieza TSC5304D
Descripción High Voltage NPN Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSC5304D Hoja de datos, Descripción, Manual

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Preliminary
TSC5304D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BVCEO = 400V
BVCBO = 750V
Ic = 4A
VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A
Features
Ordering Information
Built-in free-wheeling diode makes efficient anti
saturation operation.
Part No.
TSC5304DCH
Packing
Tube
No need to interest an hfe value because of low variable TSC5304DCP
T&R
storage-time spread even though comer spirit product.
Low base drive requirement.
Block Diagram
Suitable for half bridge light ballast applications.
Package
TO-251
TO-252
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Pulse
Total Power Dissipation (Tc=25 oC)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
RΘjc
RΘja
Limit
750V
400V
10
4
8
1.5
4
35
+150
- 65 to +150
6
90
Unit
V
V
V
A
A
W
oC
oC
oC/W
oC/W
TS5304D Preliminary
1-1
2004/09 rev. A

1 page





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