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PDF TH9030 Data sheet ( Hoja de datos )
| Número de pieza | TH9030 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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TH9030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TH9030 is Designed for
General Purpose Power oscillator
Amplifier Applications up to 2.3 GHz.
FEATURES:
• Common Collector
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 600 mA
VCEO
20 V
VCBO
45 V
VEBO
PDISS
TJ
TSTG
θJC
3.0 V
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
25 OC/W
PACKAGE STYLE .250 2L FLG
A
C
B
E
ØD
.060 x 45°
CHAMFER
G
L
HF
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .028 / 0.71
.032 / 0.81
B .740 / 18.80
C .245 / 6.22
.255 / 6.48
D .128 / 3.25
.132 / 3.35
E .125 / 3.18
F .110 / 2.79
.117 / 2.97
G .117 / 2.97
H .560 / 14.22
.570 / 14.48
I .790 / 20.07
.810 / 20.57
J .225 / 5.72
.235 / 5.97
K .165 / 4.19
.185 / 4.70
L .003 / 0.08
.007 / 0.18
M .058 / 1.47
.068 / 1.73
N .119 / 3.02
.135 / 3.43
P .149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
ICBO
VCB = 30 V
IEBO
VEB = 2.0 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
.25
.25
15 120
UNITS
mA
mA
---
COB
VCB = 20 V
f = 1.0 MHz
1.5 2.5 pF
POSC
VCE = 18 V
IE = 250 mA
f = 2.3 GHz
1.6
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet TH9030.PDF ] | |
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