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PDF BMT1720B20 Data sheet ( Hoja de datos )
| Número de pieza | BMT1720B20 | |
| Descripción | SILICON MICROWAVE POWER TRANSISTOR | |
| Fabricantes | Bipolarics | |
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BIPOLARICS, INC Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product
• Higfth=G6a.i0nGHz @ IC = 3200 mA
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
• Built-In Matching Network
for Broadband Operation
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
VCBO
VCEO
VEBO
IC
TJ
TSTG
Collector-Base Voltage
50
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
28
3.5
3200
Junction Temperature
200
Storage Temperature
-65 to 200
V
V
V
mA
oC
oC
θJC Thermal Resistance
6.5 C/W
SYMBOL
P1dB
η
PARAMETERS & CONDITIONS
VCE =28V, IC = 3200 mA, Class C
Power output at 1 dB compression:
f = 1.7 GHz
UNIT
W
Collector Efficiency
Class C
%
MIN.
TYP. MAX.
20
50
hFE Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA
10 60 100
COB Output Capacitance:
PT Total Power Dissipation
f = 1 MHz, I E = 0
pF
W
4.5
40
1 page  
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PAGE 5
BIPOLARICS, INC. Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
25 Package: 0.250" 2 Lead Flange
NOTES: (unless otherwise specified)
1. Dimensions are in
2. Tolerances: (mm)
in .xxx = ± .005
mm .xx = ± .13
3. All dimensions nominal; subject to change
without notice
LEAD 1 2
25 Package Emitter Base
3
Collector
4
Base
BIPOLARICS, INC.
602 Charcot Ave.
San Jose, CA 94538
Phone: (408) 456-0430 FAX: (408) 456-0431
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BMT1720B20.PDF ] | |
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